GRNTI 61.29 Химическое сырье
BBK 35 Химическая технология. Химические производства
In this work we present the results of AlN buffer layer ammonia MBE growth for HEMT using Ga as surfactant. Key parameters that affect the growth kinetics and defects formation are efficient fluxes of precursors and surfactant as well as the substrate temperature which limits surfactant flux because of desorption Ga from the surface. In particular, addition of Ga flux equal to Al flux at substrate temperature 1150 °C keeps the growth rate constant. This approach allows to increase surface mobility of adatoms, provides quick transition to 2D–growth mode, that results in mobility increasing in GaN bulk layer as well as in heterostructures with 2DEG. In GaN/AlGaN heterostructures mobility up to 2000 cm2/Vs was achieved.
heterostructures, AlN/AlGaN, uv optoelectronic devices, microwave transistors, dislocation dencit
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