%0 Journal Article
%T GROWTH OF LOW DISLOCATION GaN AND AlGaN layers by ammonia mbe
%A Mamaev, V.V.
%A Novikov, S.A.
%A Petrov, S.I.
%A Zaycev, S.V.
%A Prohorenkov, D.S.
%K nitride heterostructures, AlN, AlGaN, UV optoelectronic devices, microwave transistors, dislocation density
%J Bulletin of Belgorod State Technological University named after. V. G. Shukhov
%D 2016
%N 1
%P 4
%I Belgorod State Technological University named after V.G. Shukhov