TY  JOUR
TI  THE INFLUENCE OF CONDITIONS OF FORMATION OF HETEROSTRUCTURES BASED ON NITRIDES OF III GROUP, ON THE STRUCTURAL PERFECTION OF THE INSTRUMENT STRUCTURES FOR MICROWAVE TRANSISTORS, AND OPTOELECTRONIC DEVICES IN THE ULTRAVIOLET RANGE.
KW  nitride heterostructures AlN/AlGaN UV photo cathodes
KW  microwave transistors
KW  the density of dislocations
JO  Bulletin of Belgorod State Technological University named after. V. G. Shukhov
AU  Mamaev, V.V.
AU  Novikov, S.A.
AU  Petrov, S.I.
AU  Zaycev, S.V.
AU  Prohorenkov, D.S.
PY  2017
IS  2
PB  Belgorod State Technological University named after V.G. Shukhov